Characterization of 3.3 kV Discrete SiC MOSFETs in Synchronous Rectification Mode for PV Current Source Inverter Applications
Résumé
With the newest 3.3 kV discrete SiC MOSFET being released, Current Source Inverters (CSI) are able to
be adapted to 1.5 kVOC PV strings and substitute actual voltage source-based conversion systems. In
order to characterize the switching performances of these new devices, a Double-Pulse Test (DPT) circuit
has been developed. The tested switching cell is based on 3.3 kV / 120 m█ TO-263-7 discrete MOSFETs
using synchronous rectification mode. This configuration implies some challenges and introduces extra
body diode reverse recovery losses. This paper discusses the main choices, methods, issues and results
concerning the switching event for future CSI using 3.3 kV SiC MOSFETs.
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