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CMOS Active Gate Driver for Closed-Loop d v /d t Control of GaN Transistors

Abstract : This paper shows both theoretical and experimental analyses of a fully integrated CMOS active gate driver (AGD) developed to control the high dv/dt of GaN transistors for both 48 V and 400 V applications. To mitigate negative effects in the high-frequency spectrum emission, an original technique is proposed to reduce the dv/dt with lower switching losses compared to classical solutions. The AGD technique is based on a subnanosecond delay feedback loop, which reduces the gate current only during the dv/dt sequence of the switching transients. Hence, the dv/dt and di/dt can be actively controlled separately, and the trade-off between the dv/dt and EON switching energy is optimized. Since GaN transistors have typical voltage switching times on the order of a few nanoseconds, introducing a feedback loop from the high voltage drain to the gate terminal is quite challenging. In this article, we successfully demonstrate the active gate driving of GaN transistors for both 48 V and 400 V applications, with initial open-loop voltage switching times of 3 ns, due to a full CMOS integration. Other methods for dv/dt active control are further discussed. The limits of these methods are explained based on both experimental and simulation results. The AGD showed a clear reduction in the peak dv/dt from-175 V/ns to-120 V/ns for the 400 V application.
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Submitted on : Tuesday, November 3, 2020 - 9:59:35 AM
Last modification on : Tuesday, August 16, 2022 - 6:32:29 PM
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Plinio Bau, Marc Cousineau, Bernardo Cougo, Frédéric Richardeau, Nicolas C. Rouger. CMOS Active Gate Driver for Closed-Loop d v /d t Control of GaN Transistors. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2020, 35 (12), pp.13322-13332. ⟨10.1109/TPEL.2020.2995531⟩. ⟨hal-02962708⟩



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